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FDMS7600AS dual n-channel powertrench ? mosfet ?2009 fairchild semiconductor corporation FDMS7600AS rev.c www.fairchildsemi.com 1 december 2009 FDMS7600AS dual n-channel powertrench ? mosfet n-channel: 30 v, 30 a, 7.5 m ? n-channel: 30 v, 40 a, 2.8 m ? features q1: n-channel ? max r ds(on) = 7.5 m ? at v gs = 10 v, i d = 12 a ? max r ds(on) = 12 m ? at v gs = 4.5 v, i d = 10 a q2: n-channel ? max r ds(on) = 2.8 m ? at v gs = 10 v, i d = 20 a ? max r ds(on) = 3.3 m ? at v gs = 4.5 v, i d = 18 a ? rohs compliant general description this device includes two specialized n-channel mosfets in a dual mlp package.the switch node has been internally connected to enable easy placement and routing of synchronous buck converters. the contro l mosfet (q1) and synchronous syncfet (q2) have been designed to provide optimal power efficiency. applications ? computing ? communications ? general purpose point of load ? notebook v core mosfet maximum ratings t a = 25 c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter q1 q2 units v ds drain to source voltage 30 30 v v gs gate to source voltage (note 3) 20 20 v i d drain current -continuous (package limited) t c = 25 c 30 40 a -continuous (silicon limited) t c = 25 c 50 120 -continuous t a = 25 c 12 1a 22 1b -pulsed 40 60 p d power dissipation for single operation t a = 25 c 2.2 1a 2.5 1b w t a = 25 c 1.0 1c 1.0 1d t j , t stg operating and storage junction temperature range -55 to +150 c r ja thermal resistance, junction to ambient 57 1a 50 1b c/w r ja thermal resistance, junction to ambient 125 1c 120 1d r jc thermal resistance, junction to case 3.5 2 device marking device package reel size tape width quantity FDMS7600AS FDMS7600AS power 56 13 ? 12 mm 3000 units 4 3 2 1 5 6 7 8 q 1 q 2 power 56 s2 s2 s2 g2 d1 d1 d1 g1 d1 s1/d2 s2 s2 s2 g2 d1 d1 d1 g1 top bottom
FDMS7600AS dual n-channel powertrench ? mosfet ?2009 fairchild semiconductor corporation FDMS7600AS rev.c www.fairchildsemi.com 2 electrical characteristics t j = 25 c unless otherwise noted symbol parameter test conditions type min typ max units off characteristics bv dss drain to source breakdown voltage i d = 250 p a, v gs = 0 v i d = 1 ma, v gs = 0 v q1 q2 30 30 v ' bv dss ' t j breakdown voltage temperature coefficient i d = 250 p a, referenced to 25 c i d = 1 ma, referenced to 25 c q1 q2 15 18 mv / c i dss zero gate voltage drain current v ds = 24 v, v gs = 0 v q1 q2 1 500 p a p a i gss gate to source leakage current v gs = 20 v, v ds = 0 v q1 q2 100 100 na na on characteristics v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 p a v gs = v ds , i d = 1 ma q1 q2 1 1 1.8 1.5 3 3 v ' v gs(th) ' t j gate to source threshold voltage temperature coefficient i d = 250 p a, referenced to 25 c i d = 1 ma, referenced to 25 c q1 q2 -6 -5 mv/ c r ds(on) drain to source on resistance v gs = 10 v, i d = 12 a v gs = 4.5 v, i d = 10 a v gs = 10 v, i d = 12 a , t j = 125 c q1 6.0 8.5 8.3 7.5 12 12 m : v gs = 10 v, i d = 20 a v gs = 4.5 v, i d = 18 a v gs = 10 v, i d = 20 a , t j = 125 c q2 2.2 2.6 2.6 2.8 3.3 3.8 g fs forward transconductance v ds = 5 v, i d = 12 a v ds = 5 v, i d = 20 a q1 q2 63 190 s dynamic characteristics c iss input capacitance q1: v ds = 15 v, v gs = 0 v, f = 1 mhz q2: v ds = 15 v, v gs = 0 v, f = 1 mhz q1 q2 1315 5265 1750 7005 pf c oss output capacitance q1 q2 445 2150 600 2860 pf c rss reverse transfer capacitance q1 q2 45 200 70 300 pf r g gate resistance q1 q2 0.9 0.3 : switching characteristics t d(on) turn-on delay time q1: v dd = 15 v, i d = 12 a, v gs = 10 v, r gen = 6 : q2: v dd = 15 v, i d = 20 a, v gs = 10 v, r gen = 6 : q1 q2 8.6 18 18 32 ns t r rise time q1 q2 2.5 7.6 10 16 ns t d(off) turn-off delay time q1 q2 20 45 32 72 ns t f fall time q1 q2 2.3 5.2 10 10 ns q g total gate charge v gs = 0 v to 10 v q1 v dd = 15 v, i d = 12 a q2 v dd = 15 v, i d = 20 a q1 q2 20 81 28 113 nc q g total gate charge v gs = 0 v to 4.5 v q1 q2 9.3 37 13 52 nc q gs gate to source gate charge q1 q2 4.3 13 nc q gd gate to drain ?miller? charge q1 q2 2.2 9.6 nc
FDMS7600AS dual n-channel powertrench ? mosfet ?2009 fairchild semiconductor corporation FDMS7600AS rev.c www.fairchildsemi.com 3 electrical characteristics t j = 25 c unless otherwise noted drain-source diod e characteristics symbol parameter test conditions type min typ max units v sd source to drain diode forward voltage v gs = 0 v, i s = 12 a (note 2) v gs = 0 v, i s = 20 a (note 2) q1 q2 0.8 0.7 1.2 1.2 v t rr reverse recovery time q1 i f = 12 a, di/dt = 100 a/ s q2 i f = 20 a, di/dt = 300 a/ s q1 q2 27 47 43 75 ns q rr reverse recovery charge q1 q2 10 80 18 128 nc notes: 1: r ja is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r jc is guaranteed by design while r ca is determined by the user's board design. 2: pulse test: pulse width < 30 0 s, duty cycle < 2.0%. 3: as an n-ch device, the negative vgs rating is for low duty cycle pulse ocurrence only. no continuous rating is implied. a. 57 c/w when mounted on a 1 in 2 pad of 2 oz copper c. 125 c/w when mounted on a minimum pad of 2 oz copper b. 50 c/w when mounted on a 1 in 2 pad of 2 oz copper d. 120 c/w when mounted on a minimum pad of 2 oz copper
FDMS7600AS dual n-channel powertrench ? mosfet ?2009 fairchild semiconductor corporation FDMS7600AS rev.c www.fairchildsemi.com 4 typical characteristics (q1 n-channel) t j = 25 c unless otherwise noted figure 1. 0.0 0.5 1.0 1.5 2.0 0 10 20 30 40 v gs = 4.5 v v gs = 3.5 v v gs = 6 v v gs = 4 v pulse duration = 80 p s duty cycle = 0.5% max v gs = 10 v i d , drain current (a) v ds , drain to source voltage (v) on region characteristics f i g u r e 2 . 0 10203040 0 1 2 3 4 v gs = 4 v pulse duration = 80 p s duty cycle = 0.5% max normalized drain to source on-resistance i d , drain current (a) v gs = 4.5 v v gs = 6 v v gs = 3.5 v v gs = 10 v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.8 1.0 1.2 1.4 1.6 i d = 12 a v gs = 10 v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 246810 0 10 20 30 40 t j = 125 o c i d = 12 a t j = 25 o c v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( m : ) pulse duration = 80 p s duty cycle = 0.5% max o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 1.5 2.0 2.5 3.0 3.5 4.0 0 10 20 30 40 t j = 150 o c v ds = 5 v pulse duration = 80 p s duty cycle = 0.5% max t j = -55 o c t j = 25 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 40 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0 v i s , reverse drain current (a) v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
FDMS7600AS dual n-channel powertrench ? mosfet ?2009 fairchild semiconductor corporation FDMS7600AS rev.c www.fairchildsemi.com 5 figure 7. 0 5 10 15 20 0 2 4 6 8 10 i d = 12 a v dd = 20 v v dd = 10 v v gs , gate to source voltage (v) q g , gate charge (nc) v dd = 15 v gate charge characteristics figure 8. 0.1 1 10 30 10 100 1000 2000 f = 1 mhz v gs = 0 v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss c a p a c i t a n c e v s d r a i n to source voltage figure 9. 25 50 75 100 125 150 0 20 40 60 limited by package v gs = 4.5 v r t jc = 3.5 o c/w v gs = 10 v i d , drain current (a) t c , case temperature ( o c ) maximum continuous drain current vs case temperature figure 10. forward bias safe operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 dc 100 ms 10 ms 1 ms 1s i d , drain current (a) v ds , drain to source voltage (v) this area is limited by r ds ( on ) single pulse t j = max rated r t ja = 125 o c/w t a = 25 o c 10s 100us 200 figure 11. single pulse maximum power dissipation typical characteristics (q1 n-channel) t j = 25 c unless otherwise noted 10 -4 10 -3 10 -2 10 -1 110 100 1000 1 10 100 1000 p (pk) , peak transient power (w) single pulse r t ja = 125 o c/w t a = 25 o c t, pulse width (s) 0.5
FDMS7600AS dual n-channel powertrench ? mosfet ?2009 fairchild semiconductor corporation FDMS7600AS rev.c www.fairchildsemi.com 6 figure 12. junction-to-ambient transient thermal response curve 10 -4 10 -3 10 -2 10 -1 110 100 1000 0.001 0.01 0.1 1 single pulse r t ja = 125 o c/w ( note 1c ) duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration (sec) d = 0.5 0.2 0.1 0.05 0.02 0.01 2 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a typical characteristics (q1 n-channel) t j = 25 c unless otherwise noted
FDMS7600AS dual n-channel powertrench ? mosfet ?2009 fairchild semiconductor corporation FDMS7600AS rev.c www.fairchildsemi.com 7 typical characteristics (q2 n-channel) t j = 25 o c unlenss otherwise noted 0.0 0.1 0.2 0.3 0.4 0 20 40 60 v gs = 4.5 v v gs = 3 v v gs = 6 v v gs = 3.5 v pulse duration = 80 p s duty cycle = 0.5% max v gs = 10 v i d , drain current (a) v ds , drain to source voltage (v) figure 13. on-region characteristics 0204060 0 1 2 3 v gs = 3.5 v pulse duration = 80 p s duty cycle = 0.5% max normalized drain to source on-resistance i d , drain current (a) v gs = 6 v v gs = 4.5 v v gs = 3 v v gs = 10 v figure 14. normalized on-resistance vs drain current and gate voltage figure 15. normalized on-resistance vs junction temperature -75 -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 i d = 20 a v gs = 10 v normalized drain to source on-resistance t j , junction temperature ( o c ) 246810 0 2 4 6 8 10 t j = 125 o c i d = 20 a t j = 25 o c v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( m : ) pulse duration = 80 p s duty cycle = 0.5% max figure 16. on-resistance vs gate to source voltage figure 17. transfer characteristics 1.0 1.5 2.0 2.5 3.0 0 20 40 60 t j = 125 o c v ds = 5 v pulse duration = 80 p s duty cycle = 0.5% max t j = -55 o c t j = 25 o c i d , drain current (a) v gs , gate to source voltage (v) figure 18. source to drain diode forward voltage vs source current 0.00.20.40.60.81.01.2 0.01 0.1 1 10 60 t j = -55 o c t j = 25 o c t j = 125 o c v gs = 0 v i s , reverse drain current (a) v sd , body diode forward voltage (v)
typical characteristics (q2 n-channel) t j = 25 o c unless otherwise noted figure 19. gate charge characteristics 0306090 0 2 4 6 8 10 i d = 20a v dd = 20 v v dd = 10 v v gs , gate to source voltage (v) q g , gate charge (nc) v dd = 15 v 0.1 1 10 30 100 1000 10000 f = 1 mhz v gs = 0 v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss figure 20. capacitance vs drain to source voltage figure 21. maximun continuous drain current vs case temperature 25 50 75 100 125 150 0 30 60 90 120 150 r t jc = 2 o c/w v gs = 4.5 v limited by package v gs = 10 v i d , drain current (a) t c , case temperature ( o c ) 0.01 0.1 1 10 100 0.01 0.1 1 10 100 dc 100 ms 10 ms 1 ms 1s i d , drain current (a) v ds , drain to source voltage (v) this area is limited by r ds ( on ) single pulse t j = max rated r t ja = 120 o c/w t a = 25 o c 10s 200 figure 22. forward bias safe operating area figure 23. single pulse maximum power dissipation FDMS7600AS dual n-channel powertrench ? mosfet ?2009 fairchild semiconductor corporation FDMS7600AS rev.c www.fairchildsemi.com 8 10 -3 10 -2 10 -1 110 100 1000 1 10 100 1000 p (pk) , peak transient power (w) single pulse r t ja = 120 o c/w t a = 25 o c t, pulse width (s) 0.5
FDMS7600AS dual n-channel powertrench ? mosfet ?2009 fairchild semiconductor corporation FDMS7600AS rev.c www.fairchildsemi.com 9 typical characteristics (q2 n_channel) t j = 25 o c unless otherwise noted figure24. junction-to-ambient transient thermal response curve 10 -3 10 -2 10 -1 110 100 1000 0.001 0.01 0.1 1 single pulse r ja = 120 o c/w (note 1d) duty cycle-descending order normalized thermal impedance, z ja t, rectangular pulse duration (sec) d = 0.5 0.2 0.1 0.05 0.02 0.01 2 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z ja x r ja + t a
FDMS7600AS dual n-channel powertrench ? mosfet ?2009 fairchild semiconductor corporation FDMS7600AS rev.c www.fairchildsemi.com 10 syncfet schottky body diode characteristics fairchild?s syncfet process emb eds a schottky diode in parallel with powertrench mosfet. th is diode exhibits similar characteristics to a discrete exte rnal schottky diode in parallel with a mosfet. figure 25 shows the reverse recovery characteristic of the FDMS7600AS. schottky barrier diodes exhibit significant leakage at high tem- perature and high reverse voltage. this will increase the power in the device. typical char acteristics (continued) figure 25. FDMS7600AS syncfet body diode reverse recovery characteristic figure 26. syncfet body diode reverse leakage versus drain-source voltage 150 200 250 300 -5 0 5 10 15 didt = 300 a/ s current (a) time (ns) 0 5 10 15 20 25 30 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 t j = 125 o c t j = 100 o c t j = 25 o c i dss , reverse leakage current (a) v ds , reverse voltage (v)
FDMS7600AS dual n-channel powertrench ? mosfet ?2009 fairchild semiconductor corporation FDMS7600AS rev.c www.fairchildsemi.com 11 dimensional outlin e and pad layout
FDMS7600AS dual n-channel powertrench ? mosfet ?2009 fairchild semiconductor corporation FDMS7600AS rev.c www.fairchildsemi.com 12 trademarks the following includes registered and unregistered trademarks and se rvice marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of the application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical co mponents in life support devices or systems without the express written approval of fa irchild semiconductor corporation. as used herein: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life sup port device or system, or to affect its safety or effectiveness. product status definitions definition of terms accupower? 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